Test structure for performance evaluation of 3 dimensional FinFETs

Author

Ahn, Young Joon ; Cho, Hye Jin ; Kang, Hee Soo ; Lee, Choong-Ho ; Lee, Chul ; Yoon, Jae-Man ; Kim, Tae Yong ; Cho, Eun Suk ; Sung, Suk-Kang ; Park, Donggun ; Kim, Kinam ; Ryu, Byung-Il

Author_Institution

R&D center, Samsung Electron. Co., Kyonggi-do, South Korea

fYear

2005

fDate

4-7 April 2005

Firstpage

59

Lastpage

62

Abstract

The 3D MOSFET have been recognized as the main technology to substitute planar MOSFET beyond 50 nm. The development of various test structures is required to evaluate the characteristics of the new dimension. FinFET having 0, 45° rotated active directions from flat zone were evaluated, because those are critical for Si orientation of surface channel on the fin. In this paper, the performance and the reliability evaluation of 3D FinFET were performed by using two different test structures. The body tied FinFET having two different rotation angles θ=0, 45° were designed. The "θ" indicates the angle between the channel direction of the FinFET and the <110> flat zone. The electrical characteristics and reliability of the FinFET θ(45°) were measured and compared to those of the FinFET θ(0°).

Keywords

MOSFET; silicon; 3 dimensional FinFET; 3D FinFET; 3D MOSFET; Si orientation; performance evaluation; planar MOSFET; reliability evaluation; surface channel; test structure; Electric variables; Electric variables measurement; Electron mobility; Electronic equipment testing; Fabrication; FinFETs; MOSFETs; Performance evaluation; Research and development; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2005. ICMTS 2005. Proceedings of the 2005 International Conference on

Print_ISBN

0-7803-8855-0

Type

conf

DOI

10.1109/ICMTS.2005.1452221

Filename

1452221