DocumentCode
3395864
Title
Transmission line model of base spreading resistance at high currents
Author
Lin, H.C. ; Page, D.J. ; Ostop, J.
Author_Institution
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fYear
1988
fDate
2-7 Oct. 1988
Firstpage
626
Abstract
The base resistance of a bipolar transistor at high currents has been analyzed using a transmission-line model and taking the current-crowding effect into account. A closed-form solution has been obtained and shows that the collector current dependency on V/sub B,E/ is proportional to exp(V/sub B,E//2V/sub T/). This ideology factor of 2 for collector current is usually attributed to conductivity modulation at high currents. Analysis shows that the current crowding can also contribute to the nonunity ideology factor. The analysis is in agreement with experimental results.<>
Keywords
bipolar transistors; power transistors; semiconductor device models; base resistance; base spreading resistance; bipolar transistor; closed-form solution; collector current dependency; conductivity modulation; current-crowding effect; high currents; ideology factor; transmission-line model; Bipolar transistors; Closed-form solution; Conductivity; Proximity effect; Transmission lines;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Society Annual Meeting, 1988., Conference Record of the 1988 IEEE
Conference_Location
Pittsburgh, PA, USA
Type
conf
DOI
10.1109/IAS.1988.25127
Filename
25127
Link To Document