Properties of Hf/Zr doped (Na1/2Bi1/2TiO3) relaxor-ferroelectric ceramics under bias electrical field

Author

Kirsever, Derya ; Yilmaz, Hamza

Author_Institution

Dept. Metall. & Mater. Eng., Sakarya Univ., Sakarya, Turkey

fYear

2013

fDate

21-25 July 2013

Firstpage

175

Lastpage

178

Abstract

In this study, Hafnium or Zirconium doped grain oriented (Na_1/2Bi_1/2)TiO₃ (NBT) ceramics with <;001> orientation were fabricated by Templated Grain Growth (TGG) method using anisotropically shaped SrTiO₃ template particles. These molten salt synthesized SrTiO₃ platelets were tape cast with calcined NBT powder, and sintered at 1200°C for 6 h. Texture fractions up to 70% have been obtained. Also, electromechanical properties of Hf⁴⁺ and Zr⁴⁺ doped NBT ceramics under electrical bias were studied.

Keywords

bismuth compounds; calcination; electromechanical effects; ferroelectric ceramics; grain growth; hafnium; relaxor ferroelectrics; sintering; sodium compounds; tape casting; texture; zirconium; Na_0.5Bi_0.5TiO₃:Hf; Na_0.5Bi_0.5TiO₃:Zr; anisotropically shaped SrTiO₃ template particles; bias electrical field; calcination; electromechanical properties; hafnium doped grain oriented ceramics; relaxor-ferroelectric ceramics; sintering; tape casting; templated grain growth method; texture; zirconium doped grain oriented ceramics; Ceramics; Density measurement; Dielectrics; Electric fields; Epitaxial growth; Heating; electrical properties; lead-free; relaxor-ferroelectrics; sodium bismuth titanate;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy (ISAF/PFM), 2013 IEEE International Symposium on the

Conference_Location

Prague

Type

conf

DOI

10.1109/ISAF.2013.6748654

Filename

6748654