Capacitance characterization in integrated circuit development: the intimate relationship of test structure design, equivalent circuit and measurement methodology

This paper traces the historical and continuing relationship between integrated circuit device and material properties, capacitance test structure design, and measurement methodology. Design concepts for test structures useful for C-V characterization of EOT in ultra-thin leaky dielectrics are reviewed, and measurements on new and conventional devices are compared. The key premise is that test structure design should provide a structure with an equivalent circuit matching that used for measurement and data analysis.