Development of high power laser diode

We have recently observed that laser diodes operate firmly with high power and long lifetime at room temperature. This high power laser diodes can be properly used for micro-heating, micro-welding, soldering, material processing, medical applications, and pumping solid state laser. In the study, we report several significant characteristics of Al-free laser diodes through packaging the chips produced at LG CIT. The active layer of the laser diodes consists of InGaAsP and the structure is gain-guided and single quantum well. Al-free laser diodes not having COD (catastrophic optical damage) caused from Al oxidation have longer lifetimes and less opportunities to make initial failure when compared to AlGaAs laser diodes. The width of experimental laser diodes is 1 cm, with cavity length 0.5 mm and thickness 120 /spl mu/m.