Neuron devices based on point contact phototransistors

Author

Mori, Masahiko ; Nagamune, Yasushi ; Watanabe, Masanobu ; Noda, Takeshi ; Sakaki, Hiroyuki

Author_Institution

Opt. Inf. Sect., Electrotech. Lab., Tsukuba, Japan

fYear

1996

fDate

5-9 Aug. 1996

Firstpage

9

Lastpage

10

Abstract

We propose neuron devices that perform subtraction and nonlinear functions with two-input and one-output optical signals. The device based on a pair of point-contact phototransistors and a LED can easily integrated with several hundred pixels. The basic structure of the PCPT we developed is a 10 nm thickness InGaAs quantum well with GaAs barrier layers grown by molecular beam epitaxy (MBE).

Keywords

digital arithmetic; integrated optoelectronics; light emitting diodes; optical interconnections; optical neural nets; phototransistors; point contacts; smart pixels; 10 nm; GaAs barrier layers; InGaAs quantum well; InGaAs-GaAs; LED; MBE; molecular beam epitaxy; neuron devices; nonlinear functions; one-output optical signal; pixels; point contact phototransistors; subtraction; two-input optical signals; Light emitting diodes; Liquid crystal displays; Neural networks; Neurons; Nonlinear optical devices; Nonlinear optics; Optical computing; Optical devices; Optical interconnections; Phototransistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Applications of Lasers in Materials Processing/Broadband Optical Networks/Smart Pixels/Optical MEMs and Their Applications. IEEE/LEOS 1996 Summer Topical Meetings:

Conference_Location

Keystone, CO, USA

Print_ISBN

0-7803-3175-3

Type

conf

DOI

10.1109/LEOSST.1996.540721

Filename

540721