DocumentCode
3397098
Title
Compound Semiconductor Based Integrated Devices
Author
Luo, Yi ; Sun, Changzheng ; Xiong, Bing ; Wang, Jian ; Cai, Peng Fei ; Liu, Zhizhi
Author_Institution
Tsinghua Univ., Beijing
fYear
2007
fDate
July 29 2007-Aug. 11 2007
Firstpage
8
Lastpage
9
Abstract
In this talk, we give a brief introduction to our work on compound semiconductor based integrated devices, including regrowth-free distributed feedback (DFB) lasers and high-speed electroabsorption modulated lasers (EMLs).
Keywords
III-V semiconductors; aluminium compounds; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium arsenide; high-speed optical techniques; indium compounds; integrated optics; integrated optoelectronics; quantum well lasers; semiconductor quantum wells; AlGaInAs; compound semiconductor based integrated devices; high-speed electroabsorption modulated lasers; integrated optoelectronic devices; multiple quantum well; regrowth-free distributed feedback lasers; Distributed feedback devices; Fiber lasers; Gratings; High speed optical techniques; IEL; Laser feedback; Optical device fabrication; Optical feedback; Quantum well devices; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location
Beijing
Print_ISBN
978-1-4244-1591-5
Type
conf
DOI
10.1109/INOW.2007.4302840
Filename
4302840
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