DocumentCode
3397449
Title
Nanowires and Nanoneedles
Author
Chang-Hasnain, C.J.
Author_Institution
Univ. of California at Berkeley, Berkeley
fYear
2007
fDate
July 29 2007-Aug. 11 2007
Firstpage
28
Lastpage
28
Abstract
We review the progress of synthesis, characterization and properties of lll-V compound semiconductor nanowires and nanoneedles grown on Si substrates at low temperature with CMOS compatible process.
Keywords
CMOS integrated circuits; III-V semiconductors; MOCVD; nanowires; photoluminescence; semiconductor growth; semiconductor quantum wires; 2D electron confinement; CMOS compatible process; electrical properties; lll-V compound semiconductor; nanoneedles; nanowires; photoluminescence emission; silicon substrates; vapor-liquid-solid growth mechanism; wafer-scale MOCVD; Circuit synthesis; Electron optics; III-V semiconductor materials; Indium phosphide; Lattices; Nanowires; Optical materials; Optoelectronic devices; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location
Beijing
Print_ISBN
978-1-4244-1591-5
Type
conf
DOI
10.1109/INOW.2007.4302856
Filename
4302856
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