Device on the basis of intervalley electron transfer effect

The construction of device on intervalley electron transfer (IET) effect with increased efficiency is considered in the present report, which is intended for oscillator, amplifier and auto- dyne creation of cm- and mm-range for generation, amplification and conversion of UHF signals. Advantages of the offered construction of the device on intervalley electron transfer are: - much higher reliability level than for any other active solid- state elements (including all types of UHF field-effect-transistors with Shottky barrier (FET SB) and avalanche diodes); - higher level of impedance values than for FET SB and, hence, better possibilities for device matching with UHF path; - much lower phase noise level than for any other solid- state elements (all types of FET SB and IMPATT diodes); - much smaller sizes than for transistor IC on FET SB; - lack of strict requirements to technological equipment used for manufacture the chips of IET devices.