Breakdown mechanism in pulse-charged spark gap based on photoconductive switches

Author

Xu, Ming ; Shi, Wei ; Wu, Shenjiang ; Ji, WeiLi ; Zhang, Lin ; Chen, SuGuo

Author_Institution

Appl. Phys. Dept., Xi´´an Univ. of Technol., Xi´´an, China

fYear

2009

fDate

19-23 July 2009

Firstpage

583

Lastpage

586

Abstract

This paper reports the experimental results of pulse-charged spark gap based on GaAs semiconductor photoconductive switches. With variation in the position and structure of spark gap, the electric characteristics of output waveforms are obtained and the breakdown mechanism in pulse-charged spark gap based on photoconductive switches is analyzed. Results imply that high current or ultrafast pulse could be switched by those assembled switches.

Keywords

gallium arsenide; photoconducting switches; pulsed power switches; semiconductor device breakdown; spark gaps; GaAs; breakdown mechanism; electric characteristics; output waveform; pulse-charged spark gap; semiconductor photoconductive switches; Dielectric materials; Electric breakdown; Gallium arsenide; Microstrip; Photoconducting devices; Photoconductivity; Sparks; Substrates; Switches; Voltage; GaAs photoconductive switches; spark gap; ultrafast pulse;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and Applications of Dielectric Materials, 2009. ICPADM 2009. IEEE 9th International Conference on the

Conference_Location

Harbin

Print_ISBN

978-1-4244-4367-3

Electronic_ISBN

978-1-4244-4368-0

Type

conf

DOI

10.1109/ICPADM.2009.5252360

Filename

5252360