DocumentCode
3398770
Title
Extraction of channel doping profile in DMOS transistors
Author
Pieracci, A. ; Lanzoni, M. ; Galbiati, P. ; Manzini, S. ; Contiero, C. ; Ricco, B.
Author_Institution
DEIS, Bologna Univ., Italy
fYear
1996
fDate
8-11 Dec. 1996
Firstpage
485
Lastpage
488
Abstract
This paper presents the first method to characterize the doping profile and the length of the channel of double-diffused MOS transistors, typically used in smart power ICs. The method, based on capacitance measurements, is validated by means of 2D numerical simulation and applied to transistors fabricated with advanced 0.6 /spl mu/m technology.
Keywords
capacitance measurement; doping profiles; power MOSFET; semiconductor device models; semiconductor doping; 0.6 mum; 2D numerical simulation; DMOS transistors; capacitance measurements; channel doping profile extraction; channel length; double-diffused MOS transistors; epitaxial section; smart power ICs; Capacitance measurement; Doping profiles; MOSFETs; Medium voltage; Microelectronics; Numerical simulation; Power integrated circuits; Threshold voltage; Transistors; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.553842
Filename
553842
Link To Document