• DocumentCode
    3399367
  • Title

    Dielectric spectroscopies of ZnO varistors with high voltage gradient under surge aging condition

  • Author

    Long, Wangcheng ; Hu, Jun ; Liu, Jun ; He, Jinliang ; Luo, Fengchao

  • Author_Institution
    Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
  • fYear
    2009
  • fDate
    19-23 July 2009
  • Firstpage
    289
  • Lastpage
    292
  • Abstract
    ZnO varistors have been widely used in power systems as metal oxide arresters (MOA) against overvoltage surges due to their excellent nonlinear current-voltage (I-V) characteristics and surge energy absorption capabilities. The MOA applied in power system with rated voltage usually has remarkable huge size, which results in great difficulty for MOA design and manufacture. Thus, ZnO varistors with higher voltage gradient have been developed, which can sufficiently shorten the height of MOA and solve above problems. However, the aging performances of ZnO varistors with high voltage gradient have not been revealed yet. In this paper, we studied the aging characteristics of ZnO varistor samples by comparing their dielectric spectroscopies before and after surge aging experiments, which were carried out under 8/20 mus surge currents. The experimental results indicate that ZnO varistors with high voltage gradient behave distinct aging performances.
  • Keywords
    II-VI semiconductors; arresters; overvoltage protection; power systems; varistors; wide band gap semiconductors; zinc compounds; ZnO; dielectric spectroscopy; high voltage gradient; metal oxide arresters; overvoltage surges; power systems; surge aging condition; surge currents; surge energy absorption; varistors; Absorption; Aging; Arresters; Dielectrics; Electrochemical impedance spectroscopy; Power systems; Surges; Varistors; Voltage control; Zinc oxide; ZnO varistor; aging property; dielectric spectroscopy; high voltage gradient;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Properties and Applications of Dielectric Materials, 2009. ICPADM 2009. IEEE 9th International Conference on the
  • Conference_Location
    Harbin
  • Print_ISBN
    978-1-4244-4367-3
  • Electronic_ISBN
    978-1-4244-4368-0
  • Type

    conf

  • DOI
    10.1109/ICPADM.2009.5252429
  • Filename
    5252429