• DocumentCode
    3399457
  • Title

    Study of temperature-dependent electroluminescence in the high-power blue InGaN/GaN multiple quantum wells light-emitting diodes

  • Author

    Zhao, Wei ; Fei, Xiang ; Ma, Jun ; Luo, Yi

  • Author_Institution
    Tsinghua Univ., Beijing
  • fYear
    2007
  • fDate
    July 29 2007-Aug. 11 2007
  • Firstpage
    238
  • Lastpage
    239
  • Abstract
    Temperature-dependent electroluminescence (EL) spectra of 1 mm times1 mm InGaN/GaN MQWs blue LED was investigated. The enhancement of the tunneling-recombination is found to be the key mechanism for the results.
  • Keywords
    III-V semiconductors; electroluminescence; electron-hole recombination; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; tunnelling; wide band gap semiconductors; InGaN-GaN; blue LED; high-power blue multiple quantum wells light-emitting diodes; temperature-dependent electroluminescence; tunneling-recombination; Electroluminescence; Epitaxial growth; Gallium nitride; Heterojunctions; Integrated optoelectronics; Laboratories; Light emitting diodes; Quantum well devices; Temperature distribution; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-1591-5
  • Type

    conf

  • DOI
    10.1109/INOW.2007.4302970
  • Filename
    4302970
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3399457