DocumentCode
3399629
Title
Studies on Uniformity of MOVPE-Grown AlGaN/GaN HEMT Structures by Spectroscopic Ellipsometry
Author
Xi, Guangyi ; Luo, Yi ; Wang, Lai ; Li, Hongtao ; Jiang, Yang ; Chen, Dong ; Zhao, Wei ; Han, Yanjun ; Hao, Zhibiao
Author_Institution
Tsinghua Univ., Beijing
fYear
2007
fDate
July 29 2007-Aug. 11 2007
Firstpage
254
Lastpage
255
Abstract
The uniformities of AIGaN/GaN HEMT structures grown by MOVPE have been studied by using spectroscopic ellipsometry. The results show that the total flow rate is the most critical growth parameter for the uniformity.
Keywords
III-V semiconductors; MOCVD; aluminium compounds; ellipsometry; gallium compounds; high electron mobility transistors; semiconductor growth; vapour phase epitaxial growth; AlGaN-GaN; HEMT structures; MOVPE-grown structures; critical growth parameter; spectroscopic ellipsometry; Aluminum gallium nitride; Ellipsometry; Epitaxial growth; Epitaxial layers; Gallium nitride; HEMTs; Laboratories; Photonic band gap; Spectroscopy; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location
Beijing
Print_ISBN
978-1-4244-1591-5
Type
conf
DOI
10.1109/INOW.2007.4302978
Filename
4302978
Link To Document