A scalable high frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design

Author

Voinigescu, S.P. ; Maliepaard, M.C. ; Schroter, M. ; Schvan, P. ; Harame, D.L.

Author_Institution

Nortel Technol., Northern Telecom, Ottawa, Ont., Canada

fYear

1996

fDate

29 Sep-1 Oct 1996

Firstpage

61

Lastpage

64

Abstract

Fully scalable, analytical HF noise parameter equations for bipolar transistors are presented and experimentally tested on high speed Si and SiGe technologies. A technique for extracting the complete set of transistor noise parameters from Y parameter measurements only is developed and verified. Finally, the usefulness of the noise model is demonstrated in the design of tuned LNAs in the 1.9 GHz, 2.4 GHz, and 5.8 GHz bands

Keywords

UHF amplifiers; UHF bipolar transistors; UHF measurement; circuit tuning; microwave amplifiers; microwave bipolar transistors; microwave measurement; semiconductor device models; semiconductor device noise; 1.9 to 5.8 GHz; HF noise parameter equations; Si; SiGe; Y parameter measurements; bipolar transistors; low-noise amplifier design; noise model; optimal transistor sizing; scalable high frequency noise model; transistor noise parameters; tuned LNAs; Admittance; Bipolar transistors; Circuit noise; Circuit synthesis; Equations; Gallium arsenide; Integrated circuit noise; Noise figure; Noise measurement; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-3516-3

Type

conf

DOI

10.1109/BIPOL.1996.553940

Filename

553940