Recent advances in high voltage SOI technology for motor control and automotive applications

Author

Nakagawa, Akio

Author_Institution

Mater. & Devices Lab., Toshiba Corp., Kawasaki, Japan

fYear

1996

fDate

29 Sep-1 Oct 1996

Firstpage

69

Lastpage

72

Abstract

One of the drawbacks of the conventional high voltage SOI devices requires a thick buried oxide. In the present paper we propose a new high voltage SOI device structure which does not require a thick buried oxide. Second, we propose a method to reduce the chip size of high voltage power ICs by developing new LIGBTs, operating in a higher current density. Third, we demonstrate on-chip integration of MPUs, analog digital circuits and 60 V power NMOS for automotive applications

Keywords

BiCMOS integrated circuits; automotive electronics; insulated gate bipolar transistors; integrated circuit design; power integrated circuits; silicon-on-insulator; 60 V; LIGBTs; Si; automotive applications; chip size; current density; high voltage SOI technology; high voltage power ICs; motor control; on-chip integration; power NMOS; Automotive applications; CMOS technology; Diodes; Insulated gate bipolar transistors; Integrated circuit technology; Motor drives; Paper technology; Power integrated circuits; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-3516-3

Type

conf

DOI

10.1109/BIPOL.1996.553944

Filename

553944