• DocumentCode
    3401247
  • Title

    Individual reliability prediction of heterostructure RTD and devices based upon IT

  • Author

    Gudkov, A.G. ; Leushin, V.Yu. ; Ivanov, Yu.A. ; Meshkov, S.A. ; Khnykina, S.V.

  • Author_Institution
    Hyperion Ltd., Moscow
  • fYear
    2008
  • fDate
    8-12 Sept. 2008
  • Firstpage
    558
  • Lastpage
    559
  • Abstract
    Individual reliability prediction of heterostructure resonant tunneling diode (RTD) is considered; its heterostructure degradation is considered as the dominating factor that has effect on RTDpsilas output electrical characteristic and devices on its basis; the procedure of individual reliability prediction of heterostructure RTD and devices on its basis is offered.
  • Keywords
    reliability; resonant tunnelling diodes; RTD; heterostructure degradation; heterostructure resonant tunneling diode; individual reliability prediction; output electrical characteristic; Electric variables; Electromagnetic heating; Gallium arsenide; Resistance heating;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-966-335-166-7
  • Electronic_ISBN
    978-966-335-169-8
  • Type

    conf

  • DOI
    10.1109/CRMICO.2008.4676502
  • Filename
    4676502
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3401247