Electron drift velocity control in transistor structure based on GaAs quantum wire

Author

Borzdov, A.V. ; Pozdnyakov, D.V. ; Borzdov, V.M.

Author_Institution

Belarus State Univ., Minsk

fYear

2008

fDate

8-12 Sept. 2008

Firstpage

588

Lastpage

590

Abstract

The Monte-Carlo simulation of electron transport in GaAs-in-Al₂O₃ quantum wire transistor structure is performed with account of electron scattering by the localized acoustic and polar optical phonons and surface roughness. The dependencies of electron drift velocity on the longitudinal electric field strength at 77 and 300 K are calculated. The possibility of electron drift velocity control via the variation of the gate potentials leading to change in electron scattering rates is investigated.

Keywords

III-V semiconductors; Monte Carlo methods; gallium arsenide; phonons; quantum well devices; semiconductor device models; semiconductor quantum wires; surface roughness; transistors; GaAs; Monte-Carlo simulation; electron drift velocity control; electron scattering rates; electron transport; gate potentials; localized acoustic phonon; longitudinal electric field strength; polar optical phonon; quantum wire transistor structure; surface roughness; temperature 300 K; temperature 77 K; Acoustic scattering; Electron mobility; Electron optics; Gallium arsenide; Optical scattering; Particle scattering; Phonons; Rough surfaces; Velocity control; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference

Conference_Location

Sevastopol, Crimea

Print_ISBN

978-966-335-166-7

Electronic_ISBN

978-966-335-169-8

Type

conf

DOI

10.1109/CRMICO.2008.4676515

Filename

4676515