DocumentCode
340165
Title
Advanced non-linear InP HEMT model parameter estimation from vectorial large-signal measurements
Author
Schreurs, D. ; Verspecht, J. ; Vandenberghe, S. ; van der Zanden, K. ; Carchon, G. ; Nauwelaers, B.
Author_Institution
ESAT, Katholieke Univ., Leuven, Heverlee, Belgium
fYear
1999
fDate
1999
Firstpage
459
Lastpage
462
Abstract
The standard non-linear InP HEMT model parameter estimation procedure is often cumbersome as several measurement systems are involved. We show that the model generation complexity can be reduced tremendously by only using full two-port vectorial large-signal measurements. We will evaluate the results of applying this new technique to both empirical and neural network models
Keywords
III-V semiconductors; computational complexity; high electron mobility transistors; indium compounds; neural nets; parameter estimation; semiconductor device models; InP; advanced nonlinear InP HEMT model parameter estimation; empirical models; full two-port vectorial large-signal measurements; neural network models; vectorial large-signal measurements; Etching; Gold; HEMTs; Indium phosphide; Isolation technology; MMICs; Metallization; Neural networks; Parameter estimation; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location
Davos
ISSN
1092-8669
Print_ISBN
0-7803-5562-8
Type
conf
DOI
10.1109/ICIPRM.1999.773732
Filename
773732
Link To Document