• DocumentCode
    3402241
  • Title

    Radiation stability of SOI and SOS CMOS LSI

  • Author

    Demchenko, A. ; Syakersky, V. ; Shvedov, S. ; Bondarenko, V. ; Dolgyi, L.

  • Author_Institution
    Integral RPC, Minsk
  • fYear
    2008
  • fDate
    8-12 Sept. 2008
  • Firstpage
    680
  • Lastpage
    681
  • Abstract
    Comparative study of CMOS SRAM 8 K for different SOI structures (SIMOX, Smart-Cut and Dele-Cut) and SOS structures has been carried out. Radiation tests have been provided using laser and x-ray simulators in order to estimate CMOS SRAM stability to radiation pulse and total radiation dose. The tests have been carried out in active mode. The level of information safety for SRAM samples on SOI structures was three times higher than that for the samples on SOS structures. Research of the influence of total radiation dose has shown that the level was of 6middot104 units for SOS and SOI structures.
  • Keywords
    CMOS integrated circuits; SIMOX; SRAM chips; elemental semiconductors; large scale integration; radiation effects; silicon; stability; CMOS; LSI; SIMOX structures; SOI; SOS; SRAM; Si; dele-cut structures; radiation pulse; radiation stability; smart-cut structures; total radiation dose; Active appearance model; Helium; Large scale integration; Stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-966-335-166-7
  • Electronic_ISBN
    978-966-335-169-8
  • Type

    conf

  • DOI
    10.1109/CRMICO.2008.4676555
  • Filename
    4676555
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3402241