Effects of emitter scaling and device biasing on millimeter-wave VCO performance in 200 GHz SiGe HBT technology

Author

Kuo, Wei-Min Lance ; Chen, Yi-Jan Emery ; Cressler, John D. ; Freeman, Greg

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

2

fYear

2005

fDate

4-7 Dec. 2005

Abstract

The implication of emitter scaling and device biasing on millimeter-wave Colpitts VCO performance is presented in this paper. A comprehensive experimental investigation is carried out in a state-of-the-art 200 GHz SiGe HBT technology to explore the device-circuit interactions across a variety of VCO performance metrics. Design insights and tradeoffs for optimizing several VCO specifications, including oscillation frequency and phase noise, are given. Good agreement between theory and measurement is obtained.

Keywords

Ge-Si alloys; bipolar MIMIC; millimetre wave oscillators; phase noise; voltage-controlled oscillators; 200 GHz; Colpitts voltage controlled oscillator; SiGe; device biasing; emitter scaling; heterojunction bipolar transistor technology; millimeter-wave voltage controlled oscillator; oscillation frequency; phase noise; Design optimization; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Measurement; Millimeter wave technology; Phase noise; Silicon germanium; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1606401

Filename

1606401