Functional characteristics and radiation tolerance of AToM, the front-end chip of BaBar silicon vertex tracker

Author

Manfredi, P.F. ; Abbott, B. ; Clark, A. ; DeWitt, J. ; Dow, S. ; Eisner, A. ; Fan, Q. ; Frey, A. ; Johnson, R. ; Karcher, A. ; Kipnis, I. ; Kroeger, W. ; Leona, A. ; Levi, M. ; Mandelli, E. ; Luo, L. ; Morsani, F. ; Nyman, M. ; Perazzo, A. ; Pedrali-Noy,

Author_Institution

Dipt. di Elettronica, Pavia Univ., Italy

Volume

1

fYear

1998

fDate

1998

Firstpage

80

Abstract

The readout chip designed to process the microstrip signals in the BaBar silicon vertex tracker (SVT), after being realized twice in a radsoft technology has been transferred into the final radhard process. So far the circuit has gone through four different radhard submissions, one aiming at providing a preliminary insight into the characteristics of the radhard chip, the other ones constituting pre-production and production runs. Chips from these submissions have undergone a thorough set of tests addressing functional aspects, noise parameters and effects of radiation on signal and noise behavior. The present paper discusses the results of these tests and describes the final version of the circuit which has been proven to successfully meet the experiment requirements

Keywords

digital readout; nuclear electronics; position sensitive particle detectors; radiation hardening (electronics); semiconductor device noise; silicon radiation detectors; AToM; BaBar silicon vertex tracker; Si; frontend chip; functional characteristics; microstrip signals; noise parameters; radhard process; radiation tolerance; readout chip; Atomic beams; Atomic measurements; CMOS technology; Circuit noise; Circuit testing; Detectors; Microstrip; Signal processing; Silicon; Strips;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium, 1998. Conference Record. 1998 IEEE

Conference_Location

Toronto, Ont.

ISSN

1082-3654

Print_ISBN

0-7803-5021-9

Type

conf

DOI

10.1109/NSSMIC.1998.774813

Filename

774813