Intrinsic recombination coefficients in quantum well semiconductor lasers

Author

Pika, J.M. ; Menoni, C.S. ; Temkin, H. ; Thiagarajan, P. ; Robinson, G.Y.

Author_Institution

Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO, USA

Volume

2

fYear

1999

fDate

1999

Firstpage

661

Abstract

We show that it is possible to extract the intrinsic well lifetime and therefore the intrinsic recombination parameters from the measured carrier lifetime and spontaneous emission spectra of an InAsP-InGaAsP MQW laser. This method is based on a small signal solution to the rate equations for QW lasers which includes separate carrier levels for both the QW and barrier/SCH regions

Keywords

III-V semiconductors; carrier lifetime; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; spontaneous emission; InAsP-InGaAsP; InAsP-InGaAsP MQW laser; QW lasers; SCH regions; barrier regions; intrinsic recombination coefficients; intrinsic recombination parameters; intrinsic well lifetime; measured carrier lifetime; quantum well semiconductor lasers; rate equations; separate carrier levels; small signal solution; spontaneous emission spectra; Charge carrier density; Charge carrier lifetime; Equations; Laser theory; Measurement standards; Quantum well lasers; Radiative recombination; Semiconductor lasers; Temperature; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-5634-9

Type

conf

DOI

10.1109/LEOS.1999.811900

Filename

811900