Manufacturable planar bulk-InP avalanche photodiodes for 10 Gb/s applications

Author

Itzler, Mark A. ; Loi, K.K. ; McCoy, Suzanne ; Codd, Nick ; Komaba, N.

Author_Institution

EPITAXX Inc., West Trenton, NJ, USA

Volume

2

fYear

1999

fDate

1999

Firstpage

748

Abstract

We have described a planar, bulk-ZnP APD fabricated using mature production processes which is simultaneously capable of 85 GHz gain-bandwidth products, peak bandwidths in excess of 10 GHz, and low-gain (M<3) turn-on of high bandwidth performance. This device exhibits dark currents on the order of 1 nA, capacitances of about 0.2 pF, and high reliability of better than 0.5 FIT. Finally, 10 Gb/s receiver modules incorporating these PSDs with GaAs HEMT-based TIAs have achieved back-to-back sensitivities of -26.5 dBm for a bit error rate of 10^-10

Keywords

III-V semiconductors; avalanche photodiodes; error statistics; indium compounds; integrated optoelectronics; optical receivers; semiconductor device models; semiconductor device reliability; sensitivity; 0.2 pF; 1 nA; 10 GHz; 10 Gbit/s; 85 GHz; GaAs HEMT-based TIAs; InP; avalanche photodiodes; back-to-back sensitivities; bandwidth performance; bit error rate; capacitances; dark currents; fabrication; gain-bandwidth product; low-gain turn-on; mature production processes; peak bandwidths; planar bulk-InP avalanche photodiodes; receiver modules; reliability; Absorption; Avalanche photodiodes; Bit rate; Electric breakdown; Indium gallium arsenide; Indium phosphide; Manufacturing; Optical buffering; Optical receivers; P-i-n diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-5634-9

Type

conf

DOI

10.1109/LEOS.1999.811950

Filename

811950