DocumentCode
34077
Title
Self-Aligned Series Connection of an Amorphous Silicon p-i-n Type Solar Cell Using Aluminum Oblique Deposition for Minimum Power Loss
Author
Yunho Hong ; Sang Jung Kang ; Jin-Wan Jeon ; Koeng Su Lim
Author_Institution
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Volume
34
Issue
11
fYear
2013
fDate
Nov. 2013
Firstpage
1355
Lastpage
1357
Abstract
We fabricated a self-aligned series connection of an amorphous silicon p-i-n type solar cell with a small dead area of 10 μm using oblique deposition (OD). An OD on a trench can readily pattern an evaporated aluminum (Al) layer. The fabrication process consists of forming trenches on a glass substrate, depositing and texturing ZnO:Al, Al OD for auxiliary electrode, depositing p-i-n layers, Al OD, dry etching the p-i-n layers, and Al OD to connect the front electrode to the back electrode in series. The predicted fractional power loss of our series connected solar module was under 1%.
Keywords
aluminium; amorphous semiconductors; elemental semiconductors; silicon; solar cells; zinc compounds; Si; SiO2; ZnO:Al; aluminum oblique deposition; amorphous silicon p-i-n type solar cell; auxiliary electrode; dry etching; evaporated aluminum layer; glass substrate; minimum power loss; self-aligned series connection; size 10 mum; trenches; Electrodes; Lasers; Metals; PIN photodiodes; Photovoltaic cells; Resistance; Substrates; Oblique deposition; power loss; series connection; thin-film solar module;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2282918
Filename
6616565
Link To Document