DocumentCode
3408259
Title
High quality shallow p+-n junction formation by employing BF2/low energy 11B mixed ion implant process
Author
Lee, Dong-Ho ; Sohn, Yong-Sun ; Min, Kyung-youl ; Jin, Seung-Woo ; Lee, Shin-Kook ; Ahn, Dong-Joon
Author_Institution
Memory Product & Technol. Dev. Div., Hyundai Electron. Ind. Co. Ltd., Kyoungki-do, South Korea
Volume
1
fYear
1999
fDate
1999
Firstpage
83
Abstract
BF2/low energy 11B mixed ion implantation has been investigated as a new method of forming high quality shallow p +-n junctions and compared with other methods such as conventional BF2 ion implantation and 73Ge pre amorphization prior to 11B or BF2 implantation. The mixed ion implantation produced significantly lower junction leakage current than the conventional BF2 ion implantation and the 73Ge preamorphization process, which is attributed to reduction of implantation-induced damage while maintaining the advantage of BF2 ion implantation. In addition, the sheet resistance of p+-n junction and saturation current of a short channel PMOSFET were improved without causing any other deteriorative effect on transistor performance
Keywords
MOSFET; boron; elemental semiconductors; ion implantation; leakage currents; p-n junctions; semiconductor doping; silicon; BF2; Si:B; implantation-induced damage; junction leakage current; mixed ion implants; saturation current; shallow p+-n junction; sheet resistance; short channel PMOSFET; Annealing; Boron; Conductivity; Electrical resistance measurement; Furnaces; Ion implantation; Leakage current; Mass spectroscopy; Probes; Tail;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-7803-4538-X
Type
conf
DOI
10.1109/IIT.1999.812057
Filename
812057
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