DocumentCode
3408667
Title
A 70-dB, 3.1–10.6-GHz CMOS amplifier in low-power 90 nm CMOS
Author
Vu, Tuan A. ; Sudalaiyandi, Shanthi ; Naess, Oivind ; Lande, Tor Sverre ; Hamran, S.E.
Author_Institution
Dept. of Inf., Univ. of Oslo, Oslo, Norway
fYear
2011
fDate
7-10 Aug. 2011
Firstpage
1
Lastpage
4
Abstract
This paper presents a novel high-gain CMOS amplifier suitable for ultra-wideband (UWB) applications. The proposed amplifier achieves a -3 dB bandwidth covering the entire FCC UWB spectrum from 3.1 GHz to 10.6 GHz with a very high gain of approximately 70 dB. The amplifier is an area-efficient, single-inductor solution designed for TSMC 90 nm CMOS low-power process while consuming 25.1 mW from 1.2 V supply voltage.
Keywords
CMOS analogue integrated circuits; MMIC amplifiers; field effect MMIC; inductors; integrated circuit design; low-power electronics; ultra wideband technology; wideband amplifiers; FCC UWB spectrum; TSMC CMOS low-power process; UWB application; area-efficient single-inductor solution; frequency 3.1 GHz to 10.6 GHz; high-gain CMOS amplifier; power 25.1 mW; size 90 nm; ultrawideband application; voltage 1.2 V; CMOS integrated circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (MWSCAS), 2011 IEEE 54th International Midwest Symposium on
Conference_Location
Seoul
ISSN
1548-3746
Print_ISBN
978-1-61284-856-3
Electronic_ISBN
1548-3746
Type
conf
DOI
10.1109/MWSCAS.2011.6026639
Filename
6026639
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