• DocumentCode
    3408912
  • Title

    Characterisation of extended life ion source in Eaton´s NV-8250 medium current ion implanter

  • Author

    Curello, G. ; McWilliams, T. ; Watson, M. ; Arrale, A.M. ; Anjum, M.

  • Author_Institution
    Siemens Microelectron., UK
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    223
  • Abstract
    In this work a comparison of the indirectly heated cathode extended life source (ELS) relative to the enhanced Bernas source (EBS) has been carried out in the medium current regime typical of the Eaton´s 8250. Particular attention has been paid to BF2(49)-B(11) fractions for beams of different arc power for both high pressure and enriched BF3 gases. Results clearly show a much more effective performance of the ELS where about 60% lower arc power is required to achieve the same beam current of an EBS. This is related to the different BF2(49)-B(11) relative amounts produced in the two arc chambers, when the same arc power is used. A similar investigation for safe delivery system (SDS) phosphine and arsine gases was also performed. The present evaluation allowed us also to determine the different optimum arc condition to be used in running B+ and BF2+ beams which in turn results in even longer source life
  • Keywords
    ion implantation; ion sources; arc power; enhanced Bernas source; extended life ion source; indirectly heated cathode; medium current ion implanter; safe delivery system; Assembly; Availability; Cathodes; Gases; Ion sources; Microelectronics; Plasma applications; Plasma immersion ion implantation; Plasma sources; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1999.812092
  • Filename
    812092