DocumentCode
3408912
Title
Characterisation of extended life ion source in Eaton´s NV-8250 medium current ion implanter
Author
Curello, G. ; McWilliams, T. ; Watson, M. ; Arrale, A.M. ; Anjum, M.
Author_Institution
Siemens Microelectron., UK
Volume
1
fYear
1999
fDate
1999
Firstpage
223
Abstract
In this work a comparison of the indirectly heated cathode extended life source (ELS) relative to the enhanced Bernas source (EBS) has been carried out in the medium current regime typical of the Eaton´s 8250. Particular attention has been paid to BF2(49)-B(11) fractions for beams of different arc power for both high pressure and enriched BF3 gases. Results clearly show a much more effective performance of the ELS where about 60% lower arc power is required to achieve the same beam current of an EBS. This is related to the different BF2(49)-B(11) relative amounts produced in the two arc chambers, when the same arc power is used. A similar investigation for safe delivery system (SDS) phosphine and arsine gases was also performed. The present evaluation allowed us also to determine the different optimum arc condition to be used in running B+ and BF2+ beams which in turn results in even longer source life
Keywords
ion implantation; ion sources; arc power; enhanced Bernas source; extended life ion source; indirectly heated cathode; medium current ion implanter; safe delivery system; Assembly; Availability; Cathodes; Gases; Ion sources; Microelectronics; Plasma applications; Plasma immersion ion implantation; Plasma sources; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-7803-4538-X
Type
conf
DOI
10.1109/IIT.1999.812092
Filename
812092
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