A scalable I/O architecture for wide I/O DRAM

A 4 Gb DRAM architecture utilizing a scalable number of data pins is proposed. The architecture does not impact chip size and does not require additional metal layers. The 4 Gb DRAM measure 68.88 mm² and achieves an array efficiency of 59.9%. This was accomplished by using a split bank, edge I/O interface, central row, and central column structures. The architecture coincides with the chip size and array efficiency measurements predicted by the ITRS for a 40 nm 2012 production DRAM architecture.