DocumentCode
3410164
Title
Photoresist effects on wafer charging control: current-voltage characteristics measured with Charm-2 monitors during high-current As + implantation
Author
Current, Michael ; Foad, Majeed A. ; Brown, Steve ; Lukaszek, Wes ; Vella, Michael C.
Author_Institution
Appl. Mater. Inc., Santa Clara, CA, USA
Volume
1
fYear
1999
fDate
1999
Firstpage
490
Abstract
The effects of ion energy, accumulated dose, photoresist coverage and patterning were studied for As+ implants at 40, 60 and 120 keV and total doses from 1×1014 to 1016 As/cm2. The effect of photoresist coverage, ion energy and dose on positive and negative potentials and j-V characteristics are presented. J-V data are fit with a beam plasma model that describes both positive and negative charging with a consistent set of plasma parameters
Keywords
arsenic; elemental semiconductors; ion implantation; photoresists; plasma materials processing; process control; process monitoring; semiconductor doping; silicon; surface charging; surface potential; 40 to 120 keV; Charm-2 monitors; Si:As; accumulated dose; beam plasma model; current-voltage characteristics; high-current As+ implantation; ion energy; j-V characteristics; negative charging; negative potentials; patterning; photoresist coverage; photoresist effects; plasma parameters; positive charging; positive potentials; total doses; wafer charging control; Capacitors; Current measurement; Current-voltage characteristics; Electrodes; Implants; Plasma immersion ion implantation; Plasma properties; Resists; Sensor phenomena and characterization; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-7803-4538-X
Type
conf
DOI
10.1109/IIT.1999.812159
Filename
812159
Link To Document