• DocumentCode
    3411293
  • Title

    A 4Mb 0.18 μm 1T1MTJ Toggle MRAM memory

  • Author

    Nahas, J. ; Andre, T. ; Subramanian, C ; Garni, B. ; Lin, H. ; Omair, A. ; Martino, W.

  • Author_Institution
    Motorola, Austin, TX, USA
  • fYear
    2004
  • fDate
    19-19 Feb. 2004
  • Firstpage
    44
  • Abstract
    The 4.5×6.3mm2 25ns cycle-time 4Mb Toggle MRAM memory, built in 0.18 μm 5M CMOS technology, uses a 1.55 μm2 bit cell with a single toggling magneto tunnel junction. The memory uses uni-directional programming currents with isolated write and read paths and balanced current mirror sense amplifier.
  • Keywords
    CMOS memory circuits; current mirrors; magnetoresistive devices; random-access storage; tunnelling magnetoresistance; 4 Mbit; CMOS technology; balanced current mirror sense amplifier; isolated write-read paths; magnetoresistive random access memory; nonvolatile memory; precharge transistor; single toggling magneto tunnel junction; toggle MRAM memory; unidirectional programming currents; CMOS technology; Driver circuits; EPROM; Magnetic tunneling; Magnetoresistance; Manufacturing; Nonvolatile memory; Pulse amplifiers; Random access memory; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    0-7803-8267-6
  • Type

    conf

  • DOI
    10.1109/ISSCC.2004.1332585
  • Filename
    1332585
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3411293