• DocumentCode
    3412085
  • Title

    Effect of heat treatment on electric properties of Bi4Ti3O12 thin films by two-dimensional RF magnetron sputtering

  • Author

    Kudoh, K. ; Higuchi, T. ; Iwasa, M. ; Hosomizu, M. ; Tsukamoto, T.

  • Author_Institution
    Dept. of Appl. Phys., Tokyo Univ. of Sci., Japan
  • fYear
    2002
  • fDate
    28 May-1 June 2002
  • Firstpage
    167
  • Lastpage
    170
  • Abstract
    Ferroelectric B4Ti3O12 (BIT) thin films were deposited on Pt/Ti/SiO2/Si substrates by a two-dimensional RF magnetron sputtering with Bi2O3 and TiO2 targets. When the RF powers applied to Bi2O3 and TiO2 were fixed at 100 W and 200 W, respectively, the BIT thin film exhibited stoichiometric composition. The O2-annealed BIT thin film exhibited a good polarization-voltage hysteresis loop. Then, the remanent polarization and coercive field were 11.5 μC/cm2 and EC=123.1 kV/cm, respectively. The dielectric constant was about 180.
  • Keywords
    bismuth compounds; dielectric hysteresis; dielectric polarisation; ferroelectric materials; ferroelectric thin films; permittivity; sputtered coatings; stoichiometry; 100 W; 200 W; Bi4Ti3O12; Bi4Ti3O12 thin films; Pt-Ti-SiO2-Si; Pt/Ti/SiO2/Si substrates; coercive field; dielectric constant; electric properties; ferroelectric films; heat treatment; polarization-voltage hysteresis loop; remanent polarization; stoichiometric composition; two-dimensional RF magnetron sputtering; Bismuth; Ferroelectric materials; Heat treatment; Polarization; Radio frequency; Resistance heating; Semiconductor thin films; Sputtering; Substrates; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-7414-2
  • Type

    conf

  • DOI
    10.1109/ISAF.2002.1195896
  • Filename
    1195896
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3412085