An active dual-gate GaAs FET mixer for 800 MHz low current consumption mountain top repeaters

Author

Buxton, Bert ; Vahldieck, Ruediger ; Bornemann, Jens

Author_Institution

Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada

fYear

1991

fDate

9-10 May 1991

Firstpage

67

Abstract

A dual-gate GaAs FET mixer for use in a low-noise receiver front end in the frequency range of 800 to 900 MHz is presented. The circuit is made on a low-cost 0.062-in fiber glass substrate with ∈_r of 4.2 and is designed with inexpensive common surface mount components. The prototype has a third-order intercept of 9 dBm, with respect to the output level, a minimum gain of 13.9 dB, and a sensitivity of -119.3 dBm when driven with an LO power of -2 dBm and with a drain current of 3.0 mA. For improved performance and for easier integration into the receiver, the output impedance is set at 1500 Ω

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; mixers (circuits); printed circuits; repeaters; 0.062 in; 13.9 dB; 3 mA; 800 to 900 MHz; GaAs; PCB; UHF; active dual-gate GaAs FET mixer; drain current; fiber glass substrate; low current consumption mountain top repeaters; output impedance; sensitivity; Circuit noise; Costs; Diodes; FETs; Gallium arsenide; Intermodulation distortion; Local oscillators; Low-noise amplifiers; Radiofrequency amplifiers; Repeaters;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Computers and Signal Processing, 1991., IEEE Pacific Rim Conference on

Conference_Location

Victoria, BC

Print_ISBN

0-87942-638-1

Type

conf

DOI

10.1109/PACRIM.1991.160683

Filename

160683