• DocumentCode
    3412988
  • Title

    A 108Gb/s 4:1 multiplexer in 0.13μm SiGe-bipolar technology

  • Author

    Meghelli, Mounir

  • Author_Institution
    IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2004
  • fDate
    15-19 Feb. 2004
  • Firstpage
    236
  • Abstract
    A 4:1 multiplexer implemented in a 210GHz ft, 0.13μm SiGe-bipolar technology and operating beyond 100Gb/s is reported. Control of on-chip clock distribution is critical to achieve such data rate. The chip consumes 1.45W from a -3.3V supply and exhibits less than 340fs rms jitter on the output data.
  • Keywords
    Ge-Si alloys; bipolar integrated circuits; high-speed integrated circuits; multiplexing equipment; timing jitter; 1.45 W; 108 Gbit/s; RMS jitter; SiGe; bipolar technology; high-speed IC; multiplexer; on-chip clock distribution; single-ended output eye diagrams; tree architecture; Bandwidth; Clocks; Delay; Frequency; Germanium silicon alloys; Integrated circuit technology; Multiplexing; Power transmission lines; Resistors; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
  • ISSN
    0193-6530
  • Print_ISBN
    0-7803-8267-6
  • Type

    conf

  • DOI
    10.1109/ISSCC.2004.1332681
  • Filename
    1332681
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3412988