• DocumentCode
    3413957
  • Title

    Experimental results and modeling of noise coupling in a lightly doped substrate

  • Author

    Blalack, T. ; Lau, J. ; Clement, F.J.R. ; Wooley, B.A.

  • Author_Institution
    Center for Integrated Syst., Stanford Univ., CA, USA
  • fYear
    1996
  • fDate
    8-11 Dec. 1996
  • Firstpage
    623
  • Lastpage
    626
  • Abstract
    While an in-depth experimental study of substrate noise coupling in an epi process has been reported, most research into substrate coupling in lightly doped bulk wafers has been limited to simulations without experimental confirmation. This work presents experimental noise coupling data for a lightly doped substrate, along with corresponding simulation results obtained using a compact model of the substrate. The results of this work provide a general understanding of noise coupling in lightly doped substrates and emphasize the layout dependence of such noise. Without an efficient simulation capability utilizing a compact model of the substrate, it is extremely difficult to predict how noise will couple to a circuit node.
  • Keywords
    integrated circuit modelling; integrated circuit noise; substrates; bulk wafer; circuit node; lightly doped substrate; model; noise coupling; simulation; Circuit noise; Coupling circuits; Noise measurement; Optical coupling; Predictive models; Ring oscillators; Semiconductor device measurement; Semiconductor device modeling; Semiconductor device noise; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1996. IEDM '96., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-3393-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1996.554060
  • Filename
    554060