DocumentCode
3413957
Title
Experimental results and modeling of noise coupling in a lightly doped substrate
Author
Blalack, T. ; Lau, J. ; Clement, F.J.R. ; Wooley, B.A.
Author_Institution
Center for Integrated Syst., Stanford Univ., CA, USA
fYear
1996
fDate
8-11 Dec. 1996
Firstpage
623
Lastpage
626
Abstract
While an in-depth experimental study of substrate noise coupling in an epi process has been reported, most research into substrate coupling in lightly doped bulk wafers has been limited to simulations without experimental confirmation. This work presents experimental noise coupling data for a lightly doped substrate, along with corresponding simulation results obtained using a compact model of the substrate. The results of this work provide a general understanding of noise coupling in lightly doped substrates and emphasize the layout dependence of such noise. Without an efficient simulation capability utilizing a compact model of the substrate, it is extremely difficult to predict how noise will couple to a circuit node.
Keywords
integrated circuit modelling; integrated circuit noise; substrates; bulk wafer; circuit node; lightly doped substrate; model; noise coupling; simulation; Circuit noise; Coupling circuits; Noise measurement; Optical coupling; Predictive models; Ring oscillators; Semiconductor device measurement; Semiconductor device modeling; Semiconductor device noise; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.554060
Filename
554060
Link To Document