A novel technique to reduce crosstalk in monolithically integrated high speed photoreceiver arrays

Author

Syao, K.C. ; Gutierrez-Aitken, A.L. ; Yang, K. ; Zhang, X. ; Haddad ; Bhattacharya, P.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

649

Lastpage

652

Abstract

InP-based monolithically integrated p-i-n/HBT photoreceiver 8- and 16-element arrays with a novel on-chip shielding, to reduce electrical and optical crosstalk, have been fabricated and characterized. The maximum measured bandwidth per channel is 11.5 GHz. A measured adjacent channel crosstalk of -25 dB improves to -40 dB with the shielding at a frequency of 5 GHz and with a dual biasing scheme.

Keywords

arrays; crosstalk; electromagnetic shielding; high-speed optical techniques; integrated optoelectronics; optical crosstalk; optical receivers; 11.5 GHz; 5 GHz; InP; adjacent channel crosstalk; bandwidth; dual biasing; electrical crosstalk; monolithically integrated high speed device; on-chip shielding; optical crosstalk; p-i-n/HBT photoreceiver array; Bandwidth; Circuits; Heterojunction bipolar transistors; High speed optical techniques; Indium gallium arsenide; Microstrip; Optical arrays; Optical crosstalk; Optical feedback; Optical sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.554065

Filename

554065