• DocumentCode
    3416405
  • Title

    Intrinsic dependence of intermodulation distortion in HEMTs

  • Author

    Qu, Guoli ; Parker, Anthony E. ; Zhang, Guangchun

  • Author_Institution
    Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia
  • Volume
    5
  • fYear
    2005
  • fDate
    4-7 Dec. 2005
  • Abstract
    This paper analyses the intrinsic (the Taylor series coefficients) dependence of intermodulation distortion in HEMT (high electron mobility transistors) amplifiers. This analysis is very helpful for understanding the bias dependence of IM distortion since it critically depends on the bias dependence of Taylor series coefficients.
  • Keywords
    HEMT circuits; amplifiers; intermodulation distortion; HEMT amplifiers; Taylor series coefficients; bias dependence; high electron mobility transistors; intermodulation distortion; microwave transistors; Frequency; HEMTs; Intermodulation distortion; MODFETs; Microwave devices; Microwave transistors; Photovoltaic systems; Solar power generation; Taylor series; Voltage; HEMTs; Intermodulation distortion; Microwave transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
  • Print_ISBN
    0-7803-9433-X
  • Type

    conf

  • DOI
    10.1109/APMC.2005.1607025
  • Filename
    1607025
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3416405