Major influence of Ti/TiN and TTN metal barrier layer deposition on electro-migration resistivity

Author

Wei Xu ; Liao, Shengcai ; Ling Jiang ; Jian Yang ; Chao Yu

Author_Institution

Qualit.y Eng., Shanghai Hua Hong NEC Electron. Co., Ltd., Shanghai, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

The article studies electro-migration lifetime of two sputter ways - Ti/TiN and TTN for interconnection system with via to metal ARC through process, which shows an obviously better lifetime performance of Ti/TiN than that of TTN. By applying PFA method, a different failure position and smooth level is observed at barrier-dielectric interface which indicate a more defective initial interface at the very beginning of the deposition for TTN than for Ti/TiN. For further discussion, an initial resistance of via chain structure and MBIST test data is also collected.

Keywords

built-in self test; diffusion barriers; electromigration; failure analysis; integrated circuit interconnections; life testing; semiconductor device metallisation; sputter deposition; vias; MBIST test data; PFA method; barrier-dielectric interface; defective initial interface; electromigration lifetime; electromigration resistivity; failure position; initial via chain structure resistance; interconnection system; lifetime performance; metal ARC; metal barrier layer deposition; smooth level; sputter deposition; Compounds; Conductivity; Current density; Nitrogen; Resistance; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467650

Filename

6467650