Multi-parameter model for HCI lifetime prediction

Author

Lijuan Ma ; Zhaoxing Chen ; Xiao-Li Ji ; Feng Yan ; Yi Shi

Author_Institution

Sch. of Electron. Sci. & Eng., Nanjing Univ., Nanjing, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

Hot carriers injection (HCI) degradation is a key reliability problem for MOSFET devices. HCI lifetime dependents on the channel length (L), applied drain voltage (V_d) and temperature (T). In this study, we construct a multi-parameters (L, V_d, T) model for HCI lifetime prediction for 45nm nMOSFETs. These experimental parameters successfully provide the lifetime prediction based on operation conditions of voltage, length, frequency, heat for 45nm nMOSFET products.

Keywords

MOSFET; carrier lifetime; hot carriers; semiconductor device models; semiconductor device reliability; HCI degradation; HCI lifetime dependents; HCI lifetime prediction; MOSFET device; channel length; drain voltage; hot carriers injection; multiparameter model; nMOSFET product; reliability problem; size 45 nm; temperature; Acceleration; Degradation; Human computer interaction; MOSFETs; Predictive models; Semiconductor device modeling; Stress; Hot Carriers Injection; Lifetime Prediction; Multi-parameter Model; Worst Case Condition;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467651

Filename

6467651