• DocumentCode
    3416561
  • Title

    Performance improvement by stack structure in flexible resistive random access memory

  • Author

    Run-chen Fang ; Wen Yang ; Qing-Qing Sun ; Peng Zhou ; Peng-Fei Wang ; Zhang, David Wei

  • Author_Institution
    Dept. of Microelectron., Fudan Univ., Shanghai, China
  • fYear
    2012
  • fDate
    Oct. 29 2012-Nov. 1 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Resistive random access memory (RRAM) has been widely investigated. However, for the applications in flexible electronics, this type of memory is not so widely investigated for its requirement of the low processing temperature. In this paper, we demonstrated an Al2O3-based FRRAM fabricated under low temperature, and improved its performance by utilizing Al2O3/HfO2 functional stack.
  • Keywords
    aluminium compounds; flexible electronics; hafnium compounds; random-access storage; Al2O3-HfO2; FRRAM; flexible electronics; flexible resistive random access memory; low temperature fabrication; performance improvement; stack structure; Aluminum oxide; Flexible electronics; Hafnium compounds; Resistance; Switches; Temperature; Temperature measurement; Aluminum oxide; FRRAM; Hafnium oxide; High uniformity; LTALD;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4673-2474-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2012.6467657
  • Filename
    6467657
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3416561