• DocumentCode
    3416938
  • Title

    Transient analysis of 3.3kV double-side double-gate IGBTs

  • Author

    Hobart, K.D. ; Kub, F.J. ; Ancona, Mario ; Neilson, J.M. ; Waind, P.R.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • fYear
    2004
  • fDate
    24-27 May 2004
  • Firstpage
    273
  • Lastpage
    276
  • Abstract
    The transient behavior of double-side, double-gate IGBTs (DIGBTs) is presented. Devices fabricated with and without n-buffer layers are compared to conventional IGBTs. Both DIGBT designs show improved EOFF and VCE,ON compared with the 3.3 kV IGBTs. The improvement in VCE,ON is 35% and 46% for devices with and without n-buffer layers, respectively, compared to conventional IGBTs. Improvement in turn-off loss is nearly 80%, achieving EOFF as low as 9 mJ turning off 50 A at 1800 V.
  • Keywords
    insulated gate bipolar transistors; power transistors; transient response; 1800 V; 3.3 kV; 50 A; 9 mJ; DIGBT; IGBT transient analysis; double-gate IGBT; double-side IGBT; n-buffer layers; turn-off loss; Insulated gate bipolar transistors; Power transistors; Transient response;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
  • Print_ISBN
    4-88686-060-5
  • Type

    conf

  • DOI
    10.1109/ISPSD.2004.1332918
  • Filename
    1332918
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3416938