• DocumentCode
    3417122
  • Title

    Graphene nanoelectronics: Overview from post-silicon perspective

  • Author

    Bin Yu

  • Author_Institution
    Coll. of Nanoscale Sci. & Eng., State Univ. of New York, Albany, NY, USA
  • fYear
    2012
  • fDate
    Oct. 29 2012-Nov. 1 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Since its discovery in 2004, graphene, a two-dimensional (2D) crystal of sp2-bonded carbon arranged in a honeycomb lattice, has rapidly emerged as an intriguing material for a broad spectrum of applications in nano-devices. Given its exceptional carrier transport characteristics, excellent thermal conductivity, and robust electro-mechanical behavior, graphene could be potentially used in applications such as radio-frequency transistors, “post-copper” on-chip interconnects, transparent electrodes, sensors, and flexible/3D carbon electronics.
  • Keywords
    graphene; nanoelectronics; thermal conductivity; transport processes; C; carrier transport characteristics; electro-mechanical behavior; graphene nanoelectronics; honeycomb lattice; nanodevices; post silicon perspective; thermal conductivity; two-dimensional crystal; Boron; Carbon; Graphene; Integrated circuit interconnections; Photonic band gap; Substrates; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4673-2474-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2012.6467685
  • Filename
    6467685