A new vertical GaN Schottky barrier diode with floating metal ring for high breakdown voltage

Author

Lee, Seung-Chul ; Her, Jin-Cherl ; Kim, Soo-Seong ; Ha, Min-Woo ; Seo, Kwang-Seok ; Choi, Yeam-Ik ; Han, Min-Koo

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

2004

fDate

24-27 May 2004

Firstpage

319

Lastpage

322

Abstract

A vertical GaN Schottky barrier diode (SBD) employing a floating metal ring as an edge termination is described. The breakdown voltage is larger than a device without any termination that has been fabricated on a bulk GaN substrate. Fabricated GaN SBD exhibits a high breakdown voltage of 353 V and very fast reverse recovery characteristics of 28 ns. The breakdown voltage of a device without termination is 159 V. It should be noted that the proposed device does not require any additional processes.

Keywords

III-V semiconductors; Schottky diodes; gallium compounds; power semiconductor diodes; semiconductor device breakdown; wide band gap semiconductors; 159 V; 28 ns; 353 V; GaN; SBD; buck DC-DC converter; edge termination; floating metal ring; high breakdown voltage; reduced electric field concentration; vertical Schottky barrier diode; very fast reverse recovery; Gallium compounds; Power semiconductor diodes; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on

Print_ISBN

4-88686-060-5

Type

conf

DOI

10.1109/ISPSD.2004.1332930

Filename

1332930