High sampling rate 1 GS/s current mode pipeline ADC in 90 nm Si-CMOS process

Author

Tanifuji, Shoichi ; Ando, K. ; Tuan Thanh Ta ; Kameda, Suguru ; Suematsu, Noriharu ; Takagi, Toshiyuki ; Tsubouchi, Kazuo

Author_Institution

Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan

fYear

2011

fDate

24-25 Aug. 2011

Firstpage

1

Lastpage

4

Abstract

We verified possibility of high sampling rate and lower power consumption current mode ADC that focused on the most high-speed operation for millimeter-wave broad-band wireless terminal such as wireless personal area network (WPAN). A 5 bit 1 giga-samples-per-second (GS/s) current mode pipeline ADC has been designed and fabricated in 90 nm Si complementary metal oxide semiconductor (CMOS) process. The fabricated ADC has no miscode and increases monotonically. In addition, differential non linearity (DNL) is less than 1.0 and integral non linearity (INL) is less than 1.25, power consumption is 52.8mW on 1 GS/s.

Keywords

CMOS integrated circuits; MIMIC; analogue-digital conversion; current-mode circuits; elemental semiconductors; silicon; ADC; Si; Si-CMOS process; WPAN; current mode pipeline ADC; differential nonlinearity; high-speed operation; integral nonlinearity; millimeter-wave broad-band wireless terminal; power 52.8 mW; size 90 nm; wireless personal area network; word length 5 bit; Silicon; Substrates; Switches; Wireless personal area networks; ADC; Current Mode; Heterogeneous; Pipeline; Si-CMOS;

fLanguage

English

Publisher

ieee

Conference_Titel

Intelligent Radio for Future Personal Terminals (IMWS-IRFPT), 2011 IEEE MTT-S International Microwave Workshop Series on

Conference_Location

Daejeon

Print_ISBN

978-1-4577-0961-6

Electronic_ISBN

978-1-4577-0963-0

Type

conf

DOI

10.1109/IMWS2.2011.6027168

Filename

6027168