• DocumentCode
    3417207
  • Title

    Soft errors in advanced CMOS technologies

  • Author

    Schrimpf, R.D. ; Alles, M.A. ; Mamouni, F.E. ; Fleetwood, D.M. ; Weller, Robert A. ; Reed, R.A.

  • Author_Institution
    Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA
  • fYear
    2012
  • fDate
    Oct. 29 2012-Nov. 1 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Soft errors produced by ionizing radiation pose significant challenges for integrated circuits and electronic devices. The challenges and solutions change significantly as feature sizes become smaller and device topologies change. This paper reviews soft errors in advanced electronics, with emphasis on highly scaled CMOS technologies.
  • Keywords
    CMOS integrated circuits; ionisation; network topology; radiation hardening (electronics); advanced CMOS technology; electronic device; integrated circuit; ionizing radiation; soft error; topology device; CMOS integrated circuits; CMOS technology; Error analysis; FinFETs; Logic gates; Substrates; Transient analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4673-2474-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2012.6467689
  • Filename
    6467689
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3417207