Monte Carlo simulation of ion implantation damage process in silicon

In this paper is reported for the first time a rigorous physically based ion implantation damage model which successfully predicts both the as-implanted impurity profiles (SIMS) and the damage profiles (RBS) for a wide range of implant conditions for arsenic, boron and BF/sub 2/ implants. In addition, the amorphous layer thicknesses predicted by this new damage model for high dose implants are also in excellent agreement with experimental measurements. This new damage model explicitly simulates the defect production and its subsequent evolution into the experimentally observable profiles. The detailed nature of the new damage model has provided much insight into the fundamental physical processes involved in implantation damage, and could also serve as a basis for further applications such as defect engineering.