New generation metal base free IGBT module structure with low thermal resistance

Author

Nishimura, Y. ; Mochizuki, E. ; Kikuchi, M. ; Nishizawa, T. ; Ikeda, Y. ; Takahashi, Y.

Author_Institution

Fuji Hitachi Power Semicond. Co. Ltd, Matsumoto, Japan

fYear

2004

fDate

24-27 May 2004

Firstpage

347

Lastpage

350

Abstract

Thermal resistance is one of the most important characteristics in the application of power semiconductors. This paper presents a new generation metal base free IGBT module structure with low thermal resistance. In the experimental results of our new product using the new metal base free structure, heat resistance is reduced by approximately 30% in comparison with the conventional structure. And we achieved improved mechanical strength and reliability characteristics. This was achieved by using a thick copper foil with our original thin zirconia doped alumina technology.

Keywords

alumina; bonding processes; copper; insulated gate bipolar transistors; mechanical strength; power bipolar transistors; semiconductor device reliability; thermal resistance; zirconium compounds; Cu-Al₂O₃:ZrO₂; DCB; direct copper bonding; improved mechanical strength; improved reliability; insulated gate bipolar transistor; light weight; low thermal resistance; metal base free IGBT structure; power semiconductors; thick copper foil; thin zirconia doped alumina; Aluminum compounds; Copper; Insulated gate bipolar transistors; Mechanical factors; Power bipolar transistors; Semiconductor device reliability; Thermoresistivity; Zirconium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on

Print_ISBN

4-88686-060-5

Type

conf

DOI

10.1109/ISPSD.2004.1332940

Filename

1332940