An efficient method for modeling the effect of implant damage on NMOS devices using effective profiles and device simulation

This paper presents a phenomenological model to account for the channel boron redistribution in NMOS devices caused by implant damage during source drain processing. The model parameters are determined using device I-V characteristics for various channel and source drain implant conditions and can be used to extract effective 2D dopant profiles. The approach presented in this paper allows device simulation at various gate lengths without the need for calibrating simulation parameters at every gate length. Advantages and limitations of the proposed method are also discussed.