• DocumentCode
    3417597
  • Title

    Schottky-barrier CNTFET and resonant transmission through it

  • Author

    Sharifi, M.J. ; Sanaeepur, M.

  • Author_Institution
    Electr. & Comput. Fac., Shahid Beheshti Univ., Tehran, Iran
  • fYear
    2009
  • fDate
    14-16 Jan. 2009
  • Firstpage
    154
  • Lastpage
    160
  • Abstract
    In this paper we have completed previous works on SBCNFET and proposed a new three capacitance model. Using this new model we have calculated the energy profile in the channel. Moreover the transmission coefficient through the channel has been studied and modified relations which consider the electron coherency is proposed. Solving Poisson and Schro¿dinger equations self consistently, the validity of above mentioned issues are assessed.
  • Keywords
    Poisson equation; SCF calculations; Schottky barriers; Schrodinger equation; capacitance measurement; carbon nanotubes; field effect transistors; C; Poisson equations; Schottky-barrier CNTFET; Schrodinger equations; capacitance model; electron coherency; energy profile; resonant transmission; self consistent equation; transmission coefficient; Capacitance; Capacitors; Carbon nanotubes; Coaxial components; Doping; MOSFETs; Physics; Resonance; Schottky barriers; Voltage; Resonant Transmission; SBCNFET; Three capacitor model;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Adaptive Science & Technology, 2009. ICAST 2009. 2nd International Conference on
  • Conference_Location
    Accra
  • ISSN
    0855-8906
  • Print_ISBN
    978-1-4244-3522-7
  • Electronic_ISBN
    0855-8906
  • Type

    conf

  • DOI
    10.1109/ICASTECH.2009.5409732
  • Filename
    5409732
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3417597