30V sub-micron shallow junction planar-MOSFET for DC-DC converters

Author

Ono, Syotaro ; Yamaguchi, Yoshihiro ; Kawaguchi, Yusuke ; Nakagawa, Akio

Author_Institution

Discrete Semicond. Div., Toshiba Corp. Semicond. Co., Kawasaki, Japan

fYear

2004

fDate

24-27 May 2004

Firstpage

401

Lastpage

404

Abstract

We present sub-micron shallow p-base planar-DMOSFETs (DMOS: double diffused MOSFET type) for DC-DC converter applications. The shallow junction depth is quite useful to reduce the device on-resistance. It was found that the gate-drain feedback charge can effectively be reduced by adopting a very narrow and shallow JFET region with very high JFET donor concentration, based on the charge compensation theory. An experimental planar DMOSFET with p-base depth of 0.8 μm exhibited a breakdown voltage of 34 V, an Ron*Qgd of 14.9 mΩnC, and good UIS capability. This is the best value ever reported for a 30 V planar DMOSFET structure.

Keywords

DC-DC power convertors; charge compensation; power MOSFET; semiconductor device breakdown; 0.8 micron; 30 V; 34 V; DC-DC converters; DMOS; UIS capability; breakdown voltage; charge compensation theory; double diffused MOSFET; gate-drain feedback charge reduction; high JFET donor concentration; junction depth; narrow JFET region; on-resistance reduction; p-base planar-DMOSFET; shallow JFET region; shallow junction MOSFET; DC-DC power conversion; Power MOSFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on

Print_ISBN

4-88686-060-5

Type

conf

DOI

10.1109/ISPSD.2004.1332958

Filename

1332958